2013/02/28 by A. O. Sboychakov, A. L. Rakhmanov, A. V. Rozhkov +1 · 49 citations
Chemistry · Materials Science · Physics and Astronomy · #Antiferromagnetism #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Doping #Graphene #Graphene research and applications #Homogeneous #Insulator (electricity) #Materials science #Membrane #Metal #Metal–insulator transition #Nanotechnology #Optoelectronics #Phase (matter) #Phase transition #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Thermodynamics #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.87.121401
published in Physical Review B 87(12) (American Physical Society) · 5 pages, 3 eps figures, in this version minor misprints are corrected, new references are added
arxiv created 2013/03/01 · openalex publication_date 2013/03/04 · arxiv updated 2013/03/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We investigate the doping of AA-stacked graphene bilayers. By applying a mean field theory at zero temperature we find that, at half-filling, the bilayer is an antiferromagnetic insulator. Upon doping, the homogeneous phase becomes unstable with respect to phase separation. The separated phases are undoped antiferromagnetic insulator and metal with a nonzero concentration of charge carriers. At sufficiently high doping, the insulating areas shrink and disappear, and the system becomes a homogeneous metal. The conductivity changes drastically upon doping, so the bilayer may be used as a switch in electronic devices. The effects of finite temperature are also discussed.