2012/10/31 by J. A. Galvis, P. Rodière, Isabel Guillamón +14
Materials Science · Physics and Astronomy · #2D Materials and Applications #Charge (physics) #Condensed matter physics #Conductance #Graphene research and applications #Materials science #Physics #Quantum mechanics #Quantum tunnelling #Scanning tunneling microscope #Scanning tunneling spectroscopy #Superconductivity #Topological Materials and Phenomena #cond-mat.supr-con
paper · pdf · doi:10.1103/physrevb.87.094502
published as Phys. Rev. B 87, 094502 (2013) · 10 pages, 10 figures
arxiv created 2013/03/04 · openalex publication_date 2013/03/04 · arxiv updated 2013/03/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report a characterization of surfaces of the dichalcogenide TaSe2 using scanning tunneling microscopy and spectroscopy at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero-bias peak on top of Se atoms to a gap in between Se atoms. The zero-bias peak is additionally modulated by the commensurate 3a0\ifmmode×\else\texttimes\fi3a0 charge-density wave of 2H-TaSe2. Multilayers of 2H-TaSe2 show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.