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On-chip room-temperature CW lasing from a III-V nanowire integrated with a Si photonic crystal platform

2025/10/07 by Masato Takiguchi, Takuro Fujii, Takiguchi, Masato +9 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Nanowire Synthesis and Applications #Optics (physics.optics) #Photonic Crystals and Applications #Photonic and Optical Devices

paper · pdf · doi:10.48550/arxiv.2510.05477

openalex publication_date 2025/10/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics, 2, 046106 (2017)], which typically feature circular nanowire-cross-sections, suffer from a weak optical confinement, preventing CW lasing under ambient conditions. To overcome this limitation, we fabricated nanowires with rectangular cross-sections via dry etching and integrated them into the air trenches of Si PhC cavities formed using atomic force microscope tips. This configuration forms a hybrid photonic crystal cavity with an improved optical confinement. As a result, we achieved room-temperature CW oscillation from a single nanowire, representing a significant step toward on-chip nanophotonic light sources. This unique in-plane integration of the nanolaser in the same plane as the Si slab rather than on top of the substrate will contribute to the development of compact, scalable, and CMOS-compatible photonic circuits.

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