Bound States and Supercriticality in Graphene-Based Topological Insulators

2013/01/13 by D. Kloepfer, Denis Klöpfer, A. De Martino +3
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.3390/cryst3010014

published as Crystals 3, 14 (2013) · 14 pages, 4 figures, to appear in Crystals, special issue on Graphenes

arxiv created 2013/01/13 · openalex publication_date 2013/01/21 · arxiv updated 2013/01/24 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30

Abstract

We study the bound state spectrum and the conditions for entering a supercritical regime in graphene with strong intrinsic and Rashba spin-orbit interactions within the topological insulator phase. Explicit results are provided for a disk-shaped potential well and for the Coulomb center problem.

Citations

• Screening of Coulomb Impurities in Graphene
• Nonlinear screening of charge impurities in graphene
• Vacuum Polarization and Screening of Supercritical Impurities in Graphene
• Coulomb impurity in graphene
• Intrinsic and Rashba spin-orbit interactions in graphene sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Supercritical Coulomb impurities in gapped graphene
• Topological Insulators
• The electronic properties of graphene