2012/11/15 by Rui Zhang, Yunliang Dong, Wenjie Kong +5
Engineering · Materials Science · Physics and Astronomy · #Epitaxy #Fiber-reinforced polymer composites #Graphene #Graphene nanoribbons #Graphene research and applications #Monolayer #Silicon Carbide Semiconductor Technologies #Sublimation (psychology) #Surface diffusion #Wafer #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4765666
published as J. Appl. Phys. 112, 104307 (2012) · 18 pages, 8 figures
openalex publication_date 2012/11/15 · arxiv created 2012/11/28 · arxiv updated 2012/11/29 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e., carbon diffusion and stoichiometric requirement. Moreover, a new “stepdown” growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.