2010/05/18 by Sunanda P. Koduvayur, Sunanda Koduvayur, Yuli Lyanda-Geller +9 · 2 citations
Physics and Astronomy · #Condensed matter physics #Electron #Materials science #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #Strain (injury) #Surface and Thin Film Phenomena #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.106.016804
published as Physical Review Letters 106, 016804 (2011) · 10 pages, 3 figures
arxiv created 2010/05/18 · openalex publication_date 2011/01/07 · arxiv updated 2012/11/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Preferential orientation of the stripe phases in the quantum Hall (QH) regime has remained a puzzle since its discovery. We show experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the QH regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along the [110] or [110] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.