2012/05/27 by Hua Tong, H. Tong, X. Marie +2 · 26 citations
Physics and Astronomy · #Condensed matter physics #Electron #Magnetic properties of thin films #Materials science #Nuclear physics #Orbit (dynamics) #Physics #Quantum and electron transport phenomena #Relaxation (psychology) #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin–orbit interaction #Thermodynamics #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4752424
published in Journal of Applied Physics 112(6) (American Institute of Physics) · 4 pages, 3 figures
arxiv created 2012/05/27 · openalex publication_date 2012/09/15 · arxiv updated 2012/09/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The electron spin relaxation in n-type and intrinsic GaAs1−xBix with Bi composition 0≤x≤0.1 is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease the spin relaxation time as a consequence of the modification of the spin-orbit interaction, which shows the feasibility of GaAs1−xBix in the applications of spintronic devices. We demonstrate that the density and temperature dependences of spin relaxation time in GaAs1−xBix resemble the ones in GaAs. Meanwhile, the Bir-Aronov-Pikus mechanism is found to be negligible compared to the D'yakonov-Perel' mechanism in intrinsic sample. Due to the absence of direct measurement of the electron effective mass in the whole compositional range under investigation, we further explore the effect of a possible variation of electron effective mass on the electron spin relaxation.