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Low-Temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots

1999/04/20 by A. G. Huibers, Joshua Folk, J. A. Folk +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Coulomb blockade #Dephasing #Electron #Joule heating #Materials science #Microwave #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Saturation (graph theory) #Semiconductor Quantum Structures and Devices #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.83.5090

published as Phys. Rev. Lett 83, 5090 (1999) · related papers available at http://www.stanford.edu/group/MarcusLab/

arxiv created 1999/04/20 · openalex publication_date 1999/12/13 · arxiv updated 2012/08/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The dephasing time \ensuremathτ_\ensuremathφ of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below \ensuremath∼100mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperatures, suggesting that direct dephasing due to radiation is not the cause of the observed saturation. Coulomb blockade measurements show that the applied microwaves create sufficient source-drain voltages to account for dephasing due to Joule heating.

Citations