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High-frequency gate manipulation of a bilayer graphene quantum dot

2012/06/19 by S. Dröscher, J. Güttinger, Thomas Mathis +5 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Amplitude #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Coulomb blockade #Dielectric #Gate dielectric #Gate voltage #Graphene #Graphene research and applications #Materials science #Membrane #Nanotechnology #Optics #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #SIGNAL (programming language) #Semiconductor materials and devices #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.4737937

published as Appl. Phys. Lett. 101, 043107 (2012)

arxiv created 2012/06/19 · openalex publication_date 2012/07/23 · arxiv updated 2012/08/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.

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