Modelling and design of FTJs as high reading-impedance synaptic devices

2021/05/03 by Riccardo Fontanini, Marco Massarotto, Fontanini, Riccardo +9
Engineering · #Advanced Memory and Neural Computing #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2105.00752

openalex publication_date 2021/05/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read current and the current dynamic range.

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