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Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene

2012/03/31 by Motohiko Ezawa · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.109.055502

published as Phys. Rev. Lett. 109, 055502 (2012) · 4 pages, 4 figures, to be published in Phys. Rev. Lett

arxiv created 2012/06/19 · arxiv updated 2012/08/08

Abstract

Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice, which shares almost every remarkable property with graphene. The low energy structure of silicene is described by Dirac electrons with relatively large spin-orbit interactions due to its buckled structure. The key observation is that the band structure is controllable by applying the electric field to a silicene sheet. We explore the phase diagram of silicene together with exchange field M and by applying electric field Ez. There appear quantum anomalous Hall (QAH) insulator, valley polarized metal (VPM), marginal valley polarized metal (M-VPM), quantum spin Hall (QSH) insulator and band insulator (BI). They are characterized by the Chern numbers and/or by the edge modes of a nanoribbon. It is intriguing that electrons have been moved from a conduction band at the K point to a valence band at the K' point for Ez>0 in the VPM. We find in the QAH phase that flat gapless edge modes emerge and that spins form a momentum-space skyrmion to yield the Chern number. It is remarkable that a topological quantum phase transition can be induced simply by changing electric field in a single silicene sheet.

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