2011/09/24 by Richard L. J. Qiu, Xuan Gao, Xuan P. A. Gao +2 · 27 citations
Physics and Astronomy · #Capacitance #Condensed matter physics #Electrical resistivity and conductivity #Electron #Insulator (electricity) #Magnetic field #Magnetic properties of thin films #Materials science #Metal #Metal–insulator transition #Phase transition #Physics #Physics of Superconductivity and Magnetism #Quantum Hall effect #Quantum and electron transport phenomena #Quantum critical point #Quantum mechanics #Quantum phase transition #Reentrancy #Wigner crystal #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.108.106404
published in Physical Review Letters 108(10), 106404 (American Physical Society) · pdf with higher resolution figures and other related papers can be found at http://gaogroup.case.edu
arxiv created 2011/09/24 · openalex publication_date 2012/03/07 · arxiv updated 2012/03/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present the transport and capacitance measurements of 10 nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density pc down to 0.8\ifmmode×\else\texttimes\fi1010/cm2, rs\ensuremath∼36). For metallic hole density pc<p<pc+0.15\ifmmode×\else\texttimes\fi1010/cm2, a reentrant insulating phase (RIP) is observed between the \ensuremathν=1 quantum Hall state and the zero-field metallic state and it is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density, we show that the RIP is incompressible and continuously connected to the zero-field insulator, suggesting a similar origin for these two phases.