2011/12/21 by L. Britnell, R. V. Gorbachev, R. Jalil +10 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1126/science.1218461
published as Science 335 (6071) 947-950 (2012)
arxiv created 2011/12/21 · arxiv updated 2012/03/07
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.