2009/12/15 by Rajesh Kumar, Vivek Kumar, A. K. Shukla
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall #cond-mat.other
paper · pdf · doi:10.1007/s12633-010-9040-0
published as Silicon (Springer) Vol2, page: 73-77, 2010 · 9 Pages, 3 Figures and 1 Table
arxiv created 2009/12/15 · openalex publication_date 2010/04/01 · arxiv updated 2012/01/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.