2011/12/19 by Sungjae Cho, Dohun Kim, Paul Syers +3
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl203851g
published as Nano Lett., 2012, 12 (1), pp 469--472
openalex publication_date 2011/12/19 · arxiv created 2012/01/18 · arxiv updated 2012/01/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.