2010/08/31 by V. Jovanov, T. Eissfeller, S. Kapfinger +9 · 37 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Angular momentum #Atomic physics #Condensed matter physics #Diamagnetism #Electric field #Exciton #Magnetic field #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Wave function #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.83.161303
published in Physical Review B 83(16) (American Physical Society)
arxiv created 2010/08/31 · openalex publication_date 2011/04/18 · arxiv updated 2012/01/04 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Strong electrically tunable exciton g factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight-band k\ifmmode⋅\else\textperiodcentered\fip simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, dc Stark shift, diamagnetic shift, and g factor tunability for model dots with the measured size and a comparatively low In composition of xIn~35% near the dot apex. We show that the observed g factor tunability is dominated by the hole, with the electron contributing only weakly. The electric-field-induced perturbation of the hole wave function is shown to impact upon the g factor via orbital angular momentum quenching, with the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g factor modulation.