Lasing in localized modes of a slow light photonic crystal waveguide

2011/05/03 by Jin-Kyu Yang, Heeso Noh, Michael J. Rooks +3 · 2 citations
Engineering · Physics and Astronomy · #Photonic Crystals and Applications #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices #physics.optics

paper · pdf · doi:10.1063/1.3600344

8 pages, 4 figures

arxiv created 2011/05/03 · openalex publication_date 2011/06/13 · arxiv updated 2011/09/29 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We demonstrate lasing in GaAs photonic crystal waveguides with InAs quantum dots as gain medium. Structural disorder is present due to fabrication imperfection and causes multiple scattering of light and localization of light. Lasing modes with varying spatial extend are observed at random locations along the guide. Lasing frequencies are determined by the local structure and occur within a narrow frequency band which coincides with the slow light regime of the waveguide mode. The three-dimensional numerical simulation reveals that the main loss channel for lasing modes located away from the waveguide end is out-of-plane scattering by structural disorder.

Cited by

• Linear and nonlinear Rabi oscillations of a two-level system resonantly coupled to an Anderson-localized mode
• The effect of defect layer on transmissivity and light field distribution in general function photonic crystals

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