2010/08/31 by Adam Sciambi, Matthew Pelliccione, Michael P. Lilly +5
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.84.085301
arxiv created 2011/07/20 · arxiv updated 2011/08/22
We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.