Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

2011/06/01 by T. M. Lu, N. C. Bishop, T. Pluym +7 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Annealing (glass) #Coulomb blockade #Nanostructure #Polycrystalline silicon #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Semiconductor Quantum Structures and Devices #Silicon #Stack (abstract data type) #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.3615288

published as Appl. Phys. Lett.99, 043101 (2011) · 4 pages, 3 figures

arxiv created 2011/06/01 · openalex publication_date 2011/07/25 · arxiv updated 2011/07/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We propose and demonstrate a relaxed-SiGe/strained-Si enhancement-mode gate stack for quantum dots. A mobility of 1.6 × 105 cm2/Vs at 5.8 × 1011/cm2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade measured in a double-top-gated lateral quantum dot nanostructure terminates with open diamonds up to ±10 mV of dc voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics. A modified implant, polycrystalline silicon formation and annealing conditions were utilized to minimize the thermal budget that potentially leads to Ge/Si interdiffusion.

Citations

• Electronic measurement and control of spin transport in silicon

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