2011/03/31 by S. Das Sarma, Xin Wang, Shuo Yang
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.1103/physrevb.83.235314
published as Phys. Rev. B 83, 235314 (2011) · 11 pages, 3 figures
arxiv created 2011/06/10 · openalex publication_date 2011/06/10 · arxiv updated 2011/06/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard model and the microscopic theory are compared with existing experimental data, and excellent agreement between theory and experiment is found. The central approximation of our theory is a reduction of the full multielectron multiband system to an effective two-electron model, which is numerically tractable. In the microscopic theory we utilize the Hund-Mulliken approximation to the electron wave functions and compare the results calculated with two different forms of confinement potentials (biquadratic and Gaussian). We discuss the implications of our work for future studies.