2010/08/31 by C. Rivera, Carlos Rivera
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #Capacitor #Chemistry #Composite material #Condensed matter physics #Electric field #Electrostriction #Ferroelectric and Piezoelectric Materials #Materials science #Nanoscopic scale #Nanotechnology #Physics #Piezoelectric coefficient #Piezoelectricity #Polarization (electrochemistry) #Thermal properties of materials #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3524259
published as J. Appl. Phys. 109, 013513 (2011) · 13 pages, 4 figures
openalex publication_date 2011/01/01 · arxiv created 2011/04/27 · arxiv updated 2011/04/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The determination of the electromechanical properties of materials for a parallel-plate capacitor structure is affected by the electrostatic force between their electrodes. The corrections resulting from this electric-field-induced stress are usually assumed to be linked to the quadratic dependence of the strain on the electric field (electrostriction). Here we show by calculations based on thermodynamic grounds for this simple structure that the effect of the electrostatic force on piezoelectric materials can lead to both quadratic and linear corrections through the combination of the piezoelectric coupling and spontaneous polarization. The case of GaN-based capacitor nanoscale structures is presented taking into account the boundary conditions imposed as well as the effect of geometry. The results in this example point to corrections in the piezoelectric and electrostrictive coefficients higher than 0.3 pm V−1 and 2.6×10−22 m2 V−2, respectively.