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Electron bunching in triple quantum dot interferometers

2010/02/28 by Fernando Domínguez, Gloria Platero, Sigmund Kohler
Chemistry · Computer Science · Engineering · Physics and Astronomy · #Astronomical interferometer #Atomic physics #Chemistry #Electron #Interferometry #Molecular Junctions and Nanostructures #Physics #Quantum #Quantum Information and Cryptography #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #cond-mat.mes-hall

paper · pdf · doi:10.1016/j.chemphys.2010.06.017

published as Chem. Phys. 375, 284 (2010) · 8 pages, 5 figures

openalex publication_date 2010/06/17 · arxiv created 2010/07/15 · arxiv updated 2011/01/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes off-resonant. It turns out that then interference effects fade away, i.e., the current becomes independent of a penetrating flux and the detuning. The noise properties which are characterized by the full-counting statistics, however, are governed by bunching effects that may be tuned by the gate voltage. Analytical results for limiting cases support this picture. A possible application is the construction of current sources with widely tunable shot noise properties.

Citations