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Dipolar excitonic quantum wires at atomically sharp lateral interfaces

2025/09/29 by Elie Vandoolaeghe, Vandoolaeghe, Elie, Fortuna, Francesco +14 · 1 citation
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Phase-change materials and chalcogenides #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2509.24465

openalex publication_date 2025/09/29 · openalex created_date 2025/10/19 · openalex updated_date 2026/07/30

Abstract

One-dimensional (1D) quantum systems are a cornerstone of many-body physics. However, their realization in solids has traditionally relied on top-down methods, which are limited by structural disorder and coarse confinement. Here, we demonstrate a fundamentally distinct route: the emergence of 1D quantum matter at the atomically sharp interface between monolayer semiconductors. Using lateral MoSe2-WSe2 heterostructures, we identify interfacial excitonic quasiparticles that are bound to the crystal junction. Photoluminescence spectroscopy resolves these excitons into a ladder of discrete states, establishing nanoscopic 1D confinement at length scales of 3 nm. These excitons possess exceptional large permanent in-plane electric dipole moments exceeding e x 2 nm, and exhibit micron-scale, highly anisotropic diffusion confined to the interface. Crucially, the lateral geometry enables dynamic, in-situ reconfiguration of the exciton's internal structure. By introducing electrostatic doping, we demonstrate a collapse of the dipole moment and a 20-fold reduction in radiative lifetime. This structural tunability establishes lateral interfaces as a uniquely powerful platform for the 'bottom-up' engineering of 1D quantum matter. By enabling the dynamic tuning of wavefunctions within a single atomic monolayer, this work opens a scalable route toward 1D excitonic circuits and strongly correlated 1D bosonic phases.

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