2010/05/26 by C. R. Dean, A. F. Young, I. Meric +8 · 3 citations
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1038/nnano.2010.172
published as Nature Nanotechnology 5, 722-726 (2010) · 20 pages (includes supplementary info), 7 figures
arxiv created 2010/05/26 · arxiv updated 2010/10/19
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.