2010/03/29 by Paolo Michetti, Martina Cheli, Giuseppe Iannaccone
Materials Science · Physics and Astronomy · #Boron and Carbon Nanomaterials Research #Diamond and Carbon-based Materials Research #Graphene research and applications #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.3361657
published as Appl. Phys. Lett., 96(13) 133508 (2010)
openalex publication_date 2010/03/29 · arxiv created 2010/06/30 · arxiv updated 2010/07/02 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect transistors, and assess the dc and high frequency figures of merit. The steep subthreshold behavior can enable ION/IOFF ratios exceeding 104 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.