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Thermal-radiation-induced nonequilibrium carriers in intrinsic graphene

2008/08/22 by P. N. Romanets, F. T. Vasko, М. В. Стріха +1 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Thermal Radiation and Cooling Technologies #Thermal properties of materials #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.79.033406

published as Physical Review B 79, 033406 (2009) · 5 pages, 4 figures

arxiv created 2008/08/22 · openalex publication_date 2009/01/14 · arxiv updated 2010/06/29 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We have examined an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature Tr, different from T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases when the interparticle scattering is unessential and when the Coulomb scattering dominates. For the first case, the distribution function is determined by the interplay of intraband relaxation of energy due to acoustic phonons and interband radiative transitions caused by the thermal radiation. For the alter case, the quasiequilibrium distribution with effective temperature and nonequilibrium concentration, determined through balance equations, is realized. Due to the effect of thermal radiation with temperature Tr\ensuremath≠T, concentration and conductivity of carriers in graphene are modified essentially. It is demonstrated that at Tr>T, the negative interband absorption caused by the inversion of carriers distribution can occur.

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