2009/08/01 by Vibhor Singh, Mandar M. Deshmukh · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Low-power high-performance VLSI design #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.80.081404
published as Phys. Rev. B 80, 081404(R) (2009). · to appear in PRB Rapid
arxiv created 2009/08/01 · openalex publication_date 2009/08/12 · arxiv updated 2010/04/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this Rapid Communication we experimentally probe the nonequilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density (\ensuremath∼1 A/m). The measured critical currents for dissipationless transport in the vicinity of integer filling factors show a dependence on filling factor. The breakdown can be understood in terms of inter Landau level (LL) scattering resulting from mixing of wave functions of different LLs. To further study the effect of transverse electric field, we measured the transverse resistance between the \ensuremathν=2 to \ensuremathν=6 plateau transition for different bias currents and observed an invariant point.