1996/01/31 by Nikolai B. Zhitenev, N. B. Zhitenev, M. Brodsky +3
Engineering · Physics and Astronomy · #Atomic physics #Capacitance #Condensed matter physics #Conductance #Electrode #Electron #Enhanced Data Rates for GSM Evolution #Fermi gas #Materials science #Molecular Junctions and Nanostructures #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum point contact #Quantum tunnelling #Quantum well #Resonance (particle physics) #Semiconductor Quantum Structures and Devices #Spectral line #cond-mat
paper · pdf · doi:10.1103/physrevlett.77.1833
published as Phys. Rev. Lett. 77, 1833-1836 (1996) · 13 pages (revtex) including 4 figures
arxiv created 1996/01/31 · openalex publication_date 1996/08/26 · arxiv updated 2010/03/12 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We measure the frequency dependent capacitance of a gate covering the edge and part of a 2D electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic "puddle" under the gate surrounded by an insulating region. This puddle charges via electron tunneling from an edge channel. The determined tunneling conductance displays novel resonances as a function of gate bias. Samples with gates ranging from 1 to 170 \ensuremathμm along the edge show strikingly similar resonance spectra. The data suggest unexpected structure, homogeneous over long lengths, at the sample edge.