2009/03/07 by C. A. F. Vaz, Victor E. Henrich, V. E. Henrich +4 · 36 citations
Chemistry · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Annealing (glass) #Catalytic Processes in Materials Science #Chemistry #Copper-based nanomaterials and applications #Crystallinity #Crystallography #Diffraction #Electron diffraction #Epitaxy #Layer (electronics) #Materials science #Molecular beam epitaxy #Nanotechnology #Nuclear magnetic resonance #Optics #Physics #X-ray photoelectron spectroscopy #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.jcrysgro.2009.03.006
published in Journal of Crystal Growth 311(9), 2648-2654 (Elsevier BV) · 8 pages, 7 figures
arxiv created 2009/03/07 · openalex publication_date 2009/03/12 · arxiv updated 2010/03/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[-12-1]||a-Al2O3(0001)[10-10], as determined from in situ electron diffraction. Film stoichiometry is confirmed by x-ray photoelectron spectroscopy, while ex situ x-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/a-Al2O3 interface and improved surface crystallinity, as shown by x-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1 * 1), which can be explained in terms of inversion in the surface spinel structure.