2009/05/31 by Behnaz Gharekhanlou, Sina Khorasani
Materials Science · Physics and Astronomy · #2D Materials and Applications #Graphene research and applications #Supercapacitor Materials and Fabrication #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1109/ted.2009.2034494
published as IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 209-214 (2010)
arxiv created 2009/06/20 · openalex publication_date 2009/12/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain the current-voltage characteristics of such a 2-D p-n junction based on graphane. As we show, within the approximation of Shockley's law of junctions, an ideal I-V characteristic for this p-n junction is to be expected.