Nonlinear optics of III-V semiconductors in the terahertz regime: an ab-initio study

2006/08/29 by Eric Roman, Jonathan R. Yates, Marek Veithen +2 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.74.245204

9 pages, 3 figures; updated bibliography

Abstract

We compute from first principles the infrared dispersion of the nonlinear susceptibility χ⁽²⁾ in zincblende semiconductors. At terahertz frequencies the nonlinear susceptibility depends not only on the purely electronic response χ⁽²⁾_∞, but also on three other parameters C₁, C₂ and C₃ describing the contributions from ionic motion. They relate to the TO Raman polarizability, the second-order displacement-induced dielectric polarization, and the third-order lattice potential. Contrary to previous theory, we find that mechanical anharmonicity (C₃) dominates over electrical anharmonicity (C₂), which is consistent with recent experiments on GaAs. We predict that the sharp minimum in the intensity of second-harmonic generation recently observed for GaAs between ω_{\rm TO}/2 and ω_{\rm TO} does not occur for several other III-V compounds.

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