2005/10/26 by A. Amo, M. D. Martin, L. Vina +2 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.73.035205
published as Phys. Rev. B 73, 035205 (2006) · 15 pages, 7 figures, submitted to Phys. Rev. B
We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x1015 cm-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.