Onset of metallic behavior in strained(LaNiO3)n/(SrMnO3)2superlattices

2009/02/20 by Steven J. May, S. J. May, Tiffany Santos +3 · 2 citations
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.79.115127

published as Physical Review B 79, 115127 (2009) · Accepted for publication in Physical Review B

arxiv created 2009/02/20 · openalex publication_date 2009/03/25 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

(LaNiO₃)_n/(SrMnO₃)₂ superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO₃ substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than 1 unit cell. A metal-insulator transition is observed as n is decreased from 4 to 1. Analysis of the transport data suggests an evolution from gapped insulator (n=1) to hopping conductor (n=2) to metal (n=4) with increasing LaNiO₃ concentration.

Cited by

• Electronic structure and orbital polarization of LaNiO<mml:mrow/>3with a reduced coordination and under strain: A first-principles study
• Confinement-induced metal-to-insulator transition in strained LaNiO<mml:mrow/>3/LaAlO<mml:mrow/>3superlattices

Related

• Electrical transport properties of RNiO3 (R= Pr, Nd, Sm) Epitaxial Thin Films
• Emergent phase in short-periodic rare-earth nickelate superlattices
• Strain control of the metal-insulator transition in epitaxial SrCrO₃ thin films
• Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3superlattices
• Dimensional crossover of the electronic structure in LaNiO3 ultrathin films: Orbital reconstruction, Fermi surface nesting, and the origin of the metal-insulator transition