Tunneling between Edge States in a Quantum Spin Hall System

2008/11/30 by Anders Ström, Henrik Johannesson · 2 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Conductance #Conductance quantum #Electron #Graphene research and applications #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum point contact #Quantum spin Hall effect #Quantum tunnelling #Quantum well #Scaling #Spin (aerodynamics) #Spin Hall effect #Spin polarization #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.102.096806

published as Phys. Rev. Lett. 102, 096806 (2009) · 4 pages, 3 figures; published version

openalex publication_date 2009/03/04 · arxiv created 2009/03/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

Citations

• Quantum Spin Hall Effect in Graphene
• Ground-state degeneracy of the fractional quantum Hall states in the presence of a random potential and on high-genus Riemann surfaces
• Quantized Hall Conductance in a Two-Dimensional Periodic Potential
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Spin-Hall Insulator

Cited by

• Shot noise in strongly correlated double quantum spin Hall edges
• Gate-Controlled One-Dimensional Channel on the Surface of a 3D Topological Insulator