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Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

2008/08/14 by E Backen, E. Backen, S. Haindl +14 · 82 citations
Materials Science · Physics and Astronomy · #Anisotropy #Annealing (glass) #Crystallite #Electronic and Structural Properties of Oxides #Iron-based superconductors research #Magnetic and transport properties of perovskites and related materials #Pulsed laser deposition #Resistive touchscreen #Stoichiometry #Texture (cosmology) #Thin film #cond-mat.supr-con

paper · pdf · doi:10.1088/0953-2048/21/12/122001

published in Superconductor Science and Technology 21(12), 122001 (IOP Publishing) · 11 pages, 5 figures

arxiv created 2008/08/14 · openalex publication_date 2008/11/04 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

LaFeAsO 1− x F x thin films were deposited successfully on (001)-oriented LaAlO 3 and MgO substrates from stoichiometric LaFeAsO 1− x F x polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c -axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11 K. μ 0 H c 2 ( T ) was determined by resistive measurements and yield μ 0 H c 2 values of 3 T at 3.6 K for and 6 T at 6.4 K for .

Citations