Selective epitaxial growth of graphene on SiC

2008/06/30 by N. Camara, G. Rius, J.-R. Huntzinger +5 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Epitaxy #GaN-based semiconductor devices and materials #Graphene #Graphene research and applications #Monocrystalline silicon #Nitride #Silicon #Silicon Carbide Semiconductor Technologies #Silicon carbide #Sputtering #Sublimation (psychology) #Substrate (aquarium) #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2988645

comments: 3 pages, reference 3 replaced

arxiv created 2008/07/02 · openalex publication_date 2008/09/22 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We present a method of selective epitaxial growth of few layers graphene (FLG) on a “prepatterned” silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ∼1582cm−1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

Citations

• Ultrahigh electron mobility in suspended graphene
• Electric Field Effect in Atomically Thin Carbon Films
• Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
• Epitaxial graphene

Cited by

• First-principles study of defects and adatoms in silicon carbide honeycomb structures
• Early stage formation of graphene on the C face of 6H-SiC