2008/06/30 by Seiichiro Onari, Yasuhito Ishikawa, Hiroshi Kontani +2 · 1 citation
Materials Science · Physics and Astronomy · #Condensed matter physics #Electrical resistivity and conductivity #Electron #Graphene #Graphene research and applications #Hall conductivity #Hall effect #Materials science #Metal #Nanotechnology #Physics #Quantization (signal processing) #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Spin Hall effect #Spin polarization #Thermodynamics #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.78.121403
published as Phys. Rev. B 78, 121403R (2008) · 5 pages, 4 figures
openalex publication_date 2008/09/11 · arxiv created 2008/09/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We study the spin Hall effect (SHE) in graphene using a realistic multiorbital tight-binding model that includes the atomic spin-orbit interaction. The SHE is found to be induced by the spin-dependent Aharonov-Bohm phase. In the metallic case, the calculated values for the spin Hall conductivity (SHC) are much smaller than the quantized Hall conductivity for realistic parameter values of metallic graphene. In the insulating case, quantization of the SHC is violated due to the multiorbital effect. The present study suggests that the SHE in a honeycomb lattice is enhanced by chemical doping, such as the substitution of carbon atoms with boron atoms.