A gate-defined silicon quantum dot molecule

2008/06/02 by H. W. Liu, Hongwu Liu, T. Fujisawa +9 · 36 citations
Materials Science · Physics and Astronomy · #Charge (physics) #Coupling (piping) #Excitation #Molecule #Quantization (signal processing) #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Semiconductor Quantum Structures and Devices #Silicon #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.2938693

published in Applied Physics Letters 92(22), 222104 (American Institute of Physics) · 11pages,3figures

openalex publication_date 2008/06/02 · arxiv created 2008/06/03 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.

Citations

• A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
• Nonequilibrium Transport and Population Inversion in Double Quantum Dot Systems
• Relation between barrier conductance and Coulomb blockade peak splitting for tunnel-coupled quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots