2008/04/29 by Masaaki Nakamura, Lila Hirasawa, Ken‐Ichiro Imura +1 · 2 citations
Chemistry · Materials Science · Physics and Astronomy · #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Electron #Fermi energy #Fermi level #Graphene #Graphene research and applications #Landau quantization #Magnetic field #Materials science #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.78.033403
published as Phys. Rev. B 78 (2008) 033403 · 4 pages, 3 figures
arxiv created 2008/04/29 · openalex publication_date 2008/07/25 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, and diagonal and off-diagonal conductivities in finite-magnetic-field formalism. We also observed crossover of integer quantum Hall effect from two independent monolayer type systems to a strongly coupled bilayer system by changing the ratio of interlayer hopping energy and the Fermi energy. We also discuss the case of multilayer systems with Bernal stacking.