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Quantum Hall effect in bilayer and multilayer graphene with finite Fermi energy

2008/04/29 by Masaaki Nakamura, Lila Hirasawa, Ken‐Ichiro Imura +1 · 2 citations
Chemistry · Materials Science · Physics and Astronomy · #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Electron #Fermi energy #Fermi level #Graphene #Graphene research and applications #Landau quantization #Magnetic field #Materials science #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.78.033403

published as Phys. Rev. B 78 (2008) 033403 · 4 pages, 3 figures

arxiv created 2008/04/29 · openalex publication_date 2008/07/25 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, and diagonal and off-diagonal conductivities in finite-magnetic-field formalism. We also observed crossover of integer quantum Hall effect from two independent monolayer type systems to a strongly coupled bilayer system by changing the ratio of interlayer hopping energy and the Fermi energy. We also discuss the case of multilayer systems with Bernal stacking.

Citations

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