2008/04/01 by Bogdan R. Bułka, Bogdan R. Bulka
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge (physics) #Coulomb #Coulomb blockade #Electron #Fano factor #Noise (video) #Optics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Semiconductor Quantum Structures and Devices #Shot noise #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.77.165401
published as Phys. Rev. B 77, 165401 (2008) · 15 pages, 8 figures
openalex publication_date 2008/04/01 · arxiv created 2008/04/03 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We investigate a dynamical Coulomb blockade effect and its role in the enhancement of current-current correlations in a three-terminal device with a multilevel splitter, as well as with two quantum dots. Spectral decomposition analysis shows that in the Y-terminal system with a two-level ideal splitter, charge fluctuations at a level with a lowest outgoing tunneling rate are responsible for a super-Poissonian shot noise and positive cross correlations. Interestingly, for larger source-drain voltages, electrons are transferred as independent particles, when three levels participate in transport and double occupancy is allowed. We can explain compensation of the current correlations as the interplay between different bunching and antibunching processes by performing a spectral decomposition of the correlation functions for partial currents flowing through various levels. In the system with two quantum dots acting as a splitter, a long-range feedback effect of fluctuating potentials leads to the dynamical Coulomb blockade and an enhancement of shot noise.