Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

2008/01/09 by Rongwei Hu, K. J. Thomas, Y. Lee +9 · 1 citation
Physics and Astronomy · #cond-mat.str-el #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.77.085212

5 pages, 5 figures

arxiv created 2008/01/09 · arxiv updated 2009/12/01

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb₂, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

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