2008/01/22 by A. W. Rushforth, Elisa De Ranieri, E. De Ranieri +14 · 3 citations
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Multiferroics and related materials #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.78.085314
published as Physical Review B 78, 085314 (2008) · Submitted to Physical Review Letters. Updates version 1 to include a more detailed discussion of the effect of strain on the anisotropic magnetoresistance
arxiv created 2008/01/22 · openalex publication_date 2008/08/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We demonstrate voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis, which is detected by anisotropic magnetoresistance measurements. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide a microscopic understanding of the measured effect. The reported smooth voltage control of the uniaxial in-plane anisotropy, electrically induced magnetization switching, and detection of unconventional crystalline components of the anisotropic magnetoresistance illustrate the generic utility of our multiferroic system in providing device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.