2007/03/14 by Y. Hikita, Yasuyuki Hikita, Y. Kozuka +6 · 81 citations
Chemistry · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Capacitance #Characterization (materials science) #Chemistry #Condensed matter physics #Dielectric #Electrode #Electronic and Structural Properties of Oxides #Ferroelectric and Piezoelectric Materials #Magnetic and transport properties of perovskites and related materials #Materials science #Metal–semiconductor junction #Nanotechnology #Nuclear magnetic resonance #Optoelectronics #Permittivity #Photoemission spectroscopy #Physical chemistry #Physics #Polarizability #Rectangular potential barrier #Schottky barrier #Schottky diode #Schottky effect #X-ray photoelectron spectroscopy #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1063/1.2719157
published in Applied Physics Letters 90(14) (American Institute of Physics) · 15 pages, 3 figures
arxiv created 2007/03/14 · openalex publication_date 2007/04/02 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3∕Nb-doped SrTiO3 junctions for 0.01 and 0.5wt% Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.