2007/02/21 by Fabrizio Messina, F. Messina, S. Agnello +5
Materials Science · Physics and Astronomy · #Glass properties and applications #Luminescence Properties of Advanced Materials #Silicon Nanostructures and Photoluminescence #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.jnoncrysol.2006.10.033
published as J. Non-Cryst. Solids 353, 670 (2007) · 10 pages, 3 figures, in press on J. Non cryst. solids (2007)
openalex publication_date 2007/02/21 · arxiv created 2007/03/02 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/29
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation in the 10-300 K temperature range. This center exhibits two luminescence bands centered at 4.3eV and 3.2eV associated with its de-excitation from singlet (S1) and triplet (T1) states, respectively, that are linked by an intersystem crossing process. The comparison with results obtained from a bulk Ge-doped silica sample evidences that the efficiency of the intersystem crossing rate depends on the properties of the matrix embedding the Ge-oxygen defect centers, being more effective in the film than in the bulk counterpart.