2007/11/30 by Stefan Sellner, Alexander Gerlach, Stefan Kowarik +6
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Aluminium #Aluminum oxide #Chemical engineering #Chemistry #Copper Interconnects and Reliability #Inorganic chemistry #Materials science #Metallurgy #Mineralogy #Nanotechnology #Oxide #Semiconductor materials and devices #Thin film #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.soft
paper · pdf · doi:10.1016/j.tsf.2007.12.151
arxiv created 2007/11/30 · openalex publication_date 2008/01/02 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a comparative study of the growth of the technologically highly relevant gate dielectric and encapsulation material aluminum oxide in inorganic and also organic heterostructures. Atomic force microscopy studies indicate strong similarities in the surface morphology of aluminum oxide films grown on these chemically different substrates. In addition, from X-ray reflectivity measurements we extract the roughness exponent βof aluminum oxide growth on both substrates. By renormalising the aluminum oxide roughness by the roughness of the underlying organic film we find good agreement with βas obtained from the aluminum oxide on silicon oxide (β= 0.38 ± 0.02), suggesting a remarkable similarity of the aluminum oxide growth on the two substrates under the conditions employed.