2007/08/28 by M. R. Astley, M. Kataoka, C. J. B. Ford +7
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Coulomb #Coulomb barrier #Coulomb blockade #Electron #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Quantum point contact #Quantum tunnelling #Quantum well #Rectangular potential barrier #Saddle point #Semiconductor Quantum Structures and Devices #Transistor #Voltage #cond-mat.mes-hall #cond-mat.other
paper · pdf · doi:10.1103/physrevlett.99.156802
Accepted for publication in Physical Review Letters
arxiv created 2007/08/28 · openalex publication_date 2007/10/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We measure the electron escape rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate equations are used to extract the tunneling rates, which change by an order of magnitude with tunnel-barrier-gate voltage. We find that the tunneling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale ( approximately a few meV) is comparable to those in static QDs as expected.