2006/06/20 by Young Min Lee, Y. M. Lee, Jun Hayakawa +5 · 1 citation
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Theoretical and Computational Physics #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1063/1.2234720
10 pages, 5 figures, submitted to Applied Physics Letters
arxiv created 2006/06/20 · openalex publication_date 2006/07/24 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe∕Ru∕CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta=425°C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325°C. Ruthenium spacers play an important role in forming a (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.