2006/02/06 by C. Gould, K. Pappert, C. Rüster +8
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advanced Memory and Neural Computing #Computer science #Condensed matter physics #Current (fluid) #Domain (mathematical analysis) #Domain wall (magnetism) #Electrical engineering #Engineering #Ferromagnetism #Magnetic field #Magnetic properties of thin films #Magnetization #Materials science #Mathematics #Nanodevice #Nanotechnology #Optoelectronics #Physics #Realization (probability) #Spintronics #ZnO doping and properties #cond-mat.mes-hall
paper · pdf · doi:10.1143/jjap.45.3860
published as Jap. Journ. Appl. Phys. 45, issue 5A, 3860, (2006)
arxiv created 2006/02/06 · openalex publication_date 2006/05/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries. Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.