2005/01/31 by Dirk Englund, David Fattal, Edo Waks +10 · 1 citation
Engineering · Physics and Astronomy · #Photonic Crystals and Applications #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices #quant-ph
paper · pdf · doi:10.1103/physrevlett.95.013904
11 pages, 6 figures
arxiv created 2005/04/20 · openalex publication_date 2005/07/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
We observe large spontaneous emission rate modification of individual InAs quantum dots (QDs) in a 2D photonic crystal with a modified, high-Q single-defect cavity. Compared to QDs in a bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase of up to a factor of 8. In contrast, off-resonant QDs indicate up to fivefold rate quenching as the local density of optical states is diminished in the photonic crystal. In both cases, we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using finite difference time domain simulations and find good agreement with experiment.