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Implantation of labelled single nitrogen vacancy centers in diamond using N15

2005/11/30 by J. R. Rabeau*, J. R. Rabeau, P. Reichart +13 · 4 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Atomic physics #Center (category theory) #Chemistry #Crystallography #Diamond #Diamond and Carbon-based Materials Research #Hyperfine structure #Ion #Ion implantation #Ion-surface interactions and analysis #Materials science #Metallurgy #Nitrogen #Physics #Semiconductor materials and devices #Vacancy defect #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2158700

published as Applied Physics Letters 88, 023113 (2006) · 14 pages, 3 figures, to appear in Applied Physics Letters

openalex publication_date 2006/01/09 · arxiv created 2006/04/18 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Nitrogen-vacancy (NV−) color centers in diamond were created by implantation of 7 keV N15(I=1∕2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV− centers. The hyperfine spectrum from NV−15 arising from implanted N15 can be distinguished from NV−14 centers created by native N14(I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV−15 center. This report ultimately demonstrates a mechanism by which the yield of NV− center formation by nitrogen implantation can be measured.

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